v ceo 40 v v cbo 60 v v ebo 5.0 v i c 600 ma total device dissipation fr-5 board (note1) t a = 25 o c junction and storage temperature description data sheet npn general purpose transistor 2N4400 ratings maximum ratings collector - emitter voltage collector - base voltage emitter - base voltage collector current (continuous) symbol value units p d 625 mw t j , t stg -55 to 150 o c mechanical dimensions 2 3 1 electrical characteristics @ 25 o c characteristic symbol min max unit collector - emitter breakdown voltage (i c = 1.0ma) collector - base breakdown voltage (i c = 0.1ma) emitter - base breakdown voltage (i e = 0.01ma) collector cutoff current (v ce = 35v, v eb = 0.4v) dc current gain (i c = 1.0 ma, v ce = 1.0 v) (i c = 10 ma, v ce = 1.0 v) (i c = 150 ma, v ce = 1.0 v) (i c = 500 ma, v ce = 2.0 v) collector - emitter saturation voltage (i c = 150 ma, i b = 15 ma) (i c = 500 ma, i b = 50 ma) base - emitter saturation voltage (i c = 150 ma, i b = 15 ma) (i c = 500 ma, i b = 50 ma) current - gain - bandwidth product (i c = 20 ma, v ce = 10 v, f = 100 mhz) output capacitance (v cb = 5 v, i e = 0, f = 1.0 mhz) v br(ceo) 40 --- v v br(cbo) 60 --- v v br(ebo) 5.0 --- v i cex --- 0.1 m a h fe --- 20 --- 40 --- 50 150 20 --- v ce(sat) v --- 0.4 --- 0.75 v be(sat) v --- 0.95 --- 1.2 f t 200 --- mhz c ob --- 6.5 pf 1 2 3 to-92
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